View 2MBI150NB-120_138827.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IGBT MODULE ( N series ) n Features
* Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current)
n Outline Drawing
n Applications
* High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply
n Maximum Ratings and Characteristics
* Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 1200 20 150 300 150 300 1100 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
* Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=150mA VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=600V IC=150A VGE= 15V RG=5.6 IF=150A VGE=0V IF=150A Min. Typ. Max. 2.0 30 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350
4.5 24000 8700 7740 0.65 0.25 0.85 0.35
s V ns
* Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.11 0.18 Units C/W
0.025
Collector current vs. Collector-Emitter voltage Tj=25C
Collector current vs. Collector-Emitter voltage Tj=125C
VG E =20V,15V,12V,10V
300 300
VG E =20V,15V,12V,10V,
Collector current : Ic [A]
Collector current : Ic [A]
200
200
8V
100
100
8V
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector-Emitter voltage : VC E [V]
Collector-Emitter voltage : VC E [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25C
Collector-Emitter vs. Gate-Emitter voltage Tj=125C
10
10
CE [V]
8
CE [V]
8
Collector-Emitter voltage :V
6
Collector-Emitter voltage V
6
4
Ic= 300A 150A
4
Ic= 300A
2
75A
2
150A 75A
0 0 5 10 15 20 25
0 0 5 10 15 20 25
Gate-Emitter voltage : VG E [V]
Gate-Emitter voltage : VG E [V]
Switching time vs. Collector current Vcc=600V, RG=5.6 , VG E =15V, Tj=25C
1000
Switching time vs. Collector current Vcc=600V, RG =5.6 , VG E =15V, Tj=125C toff ton tf tr
toff ton
1000
Switching time : ton, tr, toff, tf [nsec]
100
Switching time : ton, tr, toff, tf [nsec]
300
tf tr
100
10 0 100 200
10 0 100 200 300
Collector current : Ic [A]
Collector current : Ic [A]
Switching time vs. RG Vcc=600V, Ic=150A, VGE=15V, Tj=25C
1000
Dynamic input characteristics Tj=25C 25 Vcc=400V
800
Switching time : ton, tr, toff, tf [nsec]
toff ton
CE [V]
600V 800V
20
1000
Collector-Emitter voltage : V
600
15
tr tf
400
10
200
5
100
0 10 0 500 1000 1500
0
2000
Gate resistance : RG [ ]
Gate charge : Qg
[nC]
Forward current vs. Forward voltage VG E = O V
Reverse recovery characteristics trr, Irr vs. IF trr
Tj=125C
300
25C trr
125C
: trr [nsec]
Reverse recovery current : Irr [A]
Forward current : I F [A]
25C Irr
100
125C Irr 25C
100
0 0 1 2 3 4 5
Reverse recovery time
10 0
200
100
200
300
Forward voltage : VF [V]
Forward current : IF [A]
Reversed biased safe operating area Transient thermal resistance +VGE=15V, -VG E <15V, Tj<125C, RG >5.6
1400
Diode
Thermal resistance : Rth(j-c) [C/W]
1200 0,1
Collector current : Ic [A]
IGBT
1000
SCSOA
800
(non-repetitive pulse)
0,01
600
400
200
RBSOA (Repetitive pulse)
0,001 0,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200
Pulse width : PW [sec]
Collector-Emitter voltage : VC E [V]
Switching loss vs. Collector current Vcc=600V, RG =5.6 , VG E =15V
50 100
Capacitance vs. Collector-Emitter voltage Tj=25C
Eon 125C
[mJ/cycle]
40
Capacitance : Cies, Coes, Cres [nF]
Eoff 125C
Cies
10
30
Switching loss : Eon,Eoff,Err
Eon 25C
20
Eoff 25C Err 125C
Coes
1
Cres
10
Err 25C
0 0 50 100 150 200 250 300
0
5
10
15
20
25
30
35
Collector Current : Ic [A]
Collector-Emitter Voltage : VC E [V]
Fuji Electric GmbH
Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax)

▲Up To Search▲

Price & Availability of 2MBI150NB-120

	To Download 2MBI150NB-120 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .